
CRYOGENIC CFMS 16
The CFMS-16 setup is designed for measuring transport, magnetic, and thermal properties of materials and nanostructures in a magnetic field range of up to 16 Tesla and temperatures down to 1.5 K.
VTI shaft diameter | 30 mm |
DC resistance measurements voltage range | from 10 nV to 100 V |
AC resistance measurements voltage range | from 10 nV to 1 V |
AC resistance measurements frequency | from 1 MHz to 100 kHz |
Heat capacity measurements, sensitivity | 1 nJ/K at 10 K |
Heat capacity measurements, sample | mass 1 µg – 200 µg, size 100 µm x 100 µm x 100 µm |
Magnetic susceptibility measurements, sensitivity (at 1 kHz) | 10-5 emu/Gauss |

CRYOGENIC CFMS 5
The CFMS-5 setup is designed for measuring transport, magnetic, and thermal properties of materials and nanostructures in a magnetic field range of up to 5 Tesla and temperatures down to 1.5 K.
VTI shaft diameter | 30 mm |
DC resistance measurements voltage range | from 10 nV to 100 V |
AC resistance measurements voltage range | from 10 nV to 1 V |
AC resistance measurements frequency | from 1 MHz to 100 kHz |
Heat capacity measurements, sensitivity | 1 nJ/K at 10 K |
Heat capacity measurements, sample | mass 1 µg – 200 µg, size 100 µm x 100 µm x 100 µm |
Magnetic susceptibility measurements, sensitivity (at 1 kHz) | 10-5 emu/Gauss |

21T cryomagnetic system
The system consists of high-field superconducting magnet mounted on a dedicated support assembly in a purpose made cryostat. The magnet is designed to produce a central field 21 Tesla when operated in conjunction with a lambda cooling loop fitted to the support assembly. The magnet is equipped with a superconducting switch, allowing it to operate in persistent field mode. The magnet support assembly is also designed to accommodate a He3 variable temperature insert (VTI) and a He4 insert. He3 VTI allows cooling down to 0.3 K by pumping helium-3 vapor. Samples can be placed on two types of holders: a fixed holder and a rotating platform. The system is also equipped with a module for vibrating sample magnetometry (VSM) and AC magnetic susceptibility measurements, enabling operation in the temperature range of 1.6-300K.
Magnet | |
Design operating field at 4K | 20 Tesla |
Maximum operating field at 4K | 20.3 Tesla |
Design operating field at 2K | 21.0 Tesla |
Central field constant | 1632.01 Gauss/Amp |
Central homogeneity (10mm DSV) | 102 |
Current for 20.0 Tesla | 122.54 Amps |
Current for 21.0 Tesla | 128.67 Amps |
Inductance | 257.0 H |
Clear bore | 40.0 mm |
He-3 VTI | |
Temperature range | 0.3 K – 300 K |
Sample mounting area | 5 mm x 5 mm |
No. of contact pins | 12 (fixed holder), 20 (rotating platform) |
Maximum operating time at 300 mK | 24 hours |
VSM an AC susceptibility | |
Sample temperature range | 1.6 – 300 K |
Range of the z-axis translation stage | 100 mm |
Vibration amplitude (typical) | 2 mm |
Vibration frequency (typical) | 20Hz |
Noise base (10 sec averaging) | 10-5 emu |
Accuracy and reproducibility | 0.5% |
Dynamic range (standard) | 108 |
Noise level | 5 x 10-6 emu/√Hz +B x 1 x 10-6 emu / T /√H |
Max. allowed sample size | 4×10 mm2 |
AC susceptibility frequency range | 1-10000 Hz |
AC sensitivity at 1kHz | 10-6 emu at 4K |

Physical Properties Measurement System Quantum Design PPMS-9
Base functionality | |
Temperature | 1.85 – 400 K |
Magnetic field | up to 9 T |
Standard measurement options | |
AC / DC charge transport | |
Dynamic magnetic susceptibility | |
Magnetic moment | Vibrating Sample Magnetometer (VSM) |
Heat capacity | Relaxation calorimeter |
Thermal conductivity and thermoelectricity | |
Advanced features | |
Sample rotation | |
He-3 cryosystem | down to 0.35 K |

BlueFors LD250
The setup is designed for measuring the parameters of nanoelectronics elements, quantum logic cells, nanomechanics, nanophotonics, and quantum metrology at ultra-low temperatures. The setup includes a measurement complex of microwave equipment from Agilent and a helium-free dilution cryostat with a pulse tube model LD250 from BlueFors for achieving ultra-low temperatures.

Low-temperature Scanning Tunneling Tunneling Microscop
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Quantum Design MPMS-XL7
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AC Susceptibility | |
Temperature Range | from 1.9 to 350 K |
Sensitivity | 2 x 10-8 emu |
Amplitude | 2 mOe ¸ 15 Oe |
Frequency Range | 10 Hz ¸ 10 kHz |
DC Magnetization sensitivity | 2.5 x 10-5 emu |
Vibrating Sample Magnetometer(VSM) | |
Temperature range | 1.9 – 400 K and 300 to 1000 K (with Oven) |
Precision | 0.5 K |
Magnetic field | up to 9 Tesla (Field uniformity 9 T: ±0.01 % over 3 cm on axis) |
Field Resolution | 0.016 mT (0.16 G) |
Oscillation frequency | 40 Hz |
Oscillation amplitude | 2 mm peak – Range of 0.5 mm¸ 5mm |
Sample Mass | < 1 gram |
RMS sensitivity | < 10-6 emu and < 10-5 emu (with oven) |
Heat Capacity | |
Temperature range | 1.9 – 400 K |
Sample size | 500 mg |
Resolution | 10 nJ/K at 2 K |
Thermal Transport | |
AC Resistivity | Measured by using precision current source and phase-sensitive voltage detection (AC Transport) |
Thermal Conductivity | Measured by applying heat from the heater shoe in order to create a user-specified temperature differential between the two thermometer shoes |
Seebeck Coefficient | Measured by creating a specified temperature drop between the two thermometer shoes – just as it does to measure thermal conductivity |
Electro Transport | Measures AC resistivity; Hall effect; I-V curve |

High Resolution Infrared Fourier-transform Spectrometer IFS 125HR
Spectral range | 11000 – 8 cm-1 | 0.9 – 1250 mm |
Resolution | Better than 0.0063 cm-1 |
Resolving power | Better than 106 |
Wavenumber accuracy | Better than 5∙10-7 x wavenumber (absolute) | 1∙10-7 (relative) |
Photometric accuracy | 0.1% T |
Aperture | f/6.5 |
Scanner speeds | 0.16-2.5 cm/s |

Spectral ellipsometer J.A. Woollam VASE
Determination of the optical properties of bulk and film samples of metals, dielectrics and semiconductors in the wavelength range 193-2500 nm (complex refractive index, dielectric constant, film thickness of materials with known optical constants) at temperatures 4.2-500K.
Spectral range | 193 – 2500 nm |
Spectral resolution | 0.3 Å |
Data acquisition rate | 1 – 3 s per wavelength |
Accuracy of the fully-automated goniometric platform that provides the independent movement of the sample and detector | 0.01° |
Angle range of the fully-automated goniometer | 15° – 90° (reflection) | 0° – 90° (transmission) |
Accuracy of the build-in four quadrant detector that provides an accurate setting of the sample angle | up to 0.001° |
Measurement accuracy Y | 45° ± 0.03° |
Measurement accuracy D | 0° ± 0.02° |
Reproducibility for the sample 30 nm SiO2/Si | Y = ± 0.015° | D= ± 0.08° |
Minimum dimensions of the samples studied | down to 2 mm |
Accuracy of the refractive index determination of the bulk sample | 0.005 @ 1 mm |
Accuracy of determination of the absorption coefficient | @ 1 mm |
Absorbing sample | 0.005 |
Transparent sample | 0.05 |
Temperature adjustment range of the sample | 4.2 – 500K |
Accuracy of the temperature setting | ± 0.1K |

Tensor 27
Measurement of transmission and reflection spectra in the mid-IR range (7500-370 cm-1, 1.3-27 µm)
Spectral range | 7500 – 370 cm-1 |
Spectral resolution | 0.5 cm-1 (with apodization) |
Wavenumber accuracy | 0.01 @ 2000 cm-1 |
Photometric accuracy | 0.1% T |

twinned glove boxes with high-purity argon atmosphere
Two pieces of twinned glove boxes with high-purity argon atmosphere with analytical balances, hydraulic press and digital microscope for sample disassembly and mounting.
Intended for work with sensitive materials (alkaline and alkaline-earth, rare-earth metals) in high-purity inert gas environment without access of oxygen and water.
The working medium is argon.
The content of oxygen and water vapor in the working medium is less than 0.1ppm.
The size of the small antechamber for specimens and instruments insert is 145 mm inner diameter and 355 mm length.
The size of the large antechamber for the insert of additional equipment – inner diameter 370 mm, length 745 mm.

Vacuumable glove box with nitrogen atmosphere
Allows one to work with additional equipment and open ampoules in an oxygen-free environment.
The working medium is nitrogen.
The content of oxygen and water vapor in the working medium is less than 1ppm.
Sample and instrument antechamber size – inner diameter 345 mm, length 460 mm;

Retsch Cryomill Vibrating mill
The CryoMill is a laboratory ball mill specifically designed for this application. It features an integrated cooling system which continually cools the grinding jar with liquid nitrogen before and during the grinding process. Thus, the sample is embrittled and volatile components are preserved. The liquid nitrogen is continually supplied from an autofill system in the exact amount required to keep the temperature at –196 °C.
Initial particle size | <= 8 mm |
Final fineness | ~ 5 um |
Usable volume | Max. 20 ml |
Number of grinding jars | 1 |
Vibration frequency | 5 – 30 Hz (300 – 1800 rpm) |
Dry grinding | Yes |
Wet grinding | Yes |
Cryogenic grinding | Yes |
Grinding jar material | Stainless steel |
Grinding jar volume | 5 ml, 35 ml, 50 ml |

Fritsch Pulverisette 7 Premium Line Planetary mill
The Planetary Micro Mill PULVERISETTE 7 premium line with 2 grinding stations is designed for a broad range of applications and ideally suited for loss-free grinding down to a final fineness of 100 nm of hard, medium-hard and brittle materials. Depending on the desired final fineness, the grinding can be performed dry, in suspension or in inert gas. In addition to comminution, one can also use the mill for mixing and homogenising emulsions and pastes or for mechanical activation and alloying in materials research.
Initial particle size | 5 mm |
Average grinding fineness | Up to d50 < 0,1 um |
Number of grinding jars | 2 pcs |
Frequency ratio of planetary and cup rotation | 1:-2 |
Rotational frequency of the planetary disk | 150 – 1100 rpm |
Maximum acceleration | 928 m/s2 (94,6 g) |
Reverse drive | Yes |
Grinding jar volume | 20, 45, 80 ml |
Grinding jar material | Tungsten carbide, zirconia |

Powteq BM6 Pro Planetary mill
Planetary Ball Mill BM6Pro is suitable for dry and wet grinding and mixing some soft, hard, brittle and fibrous samples, which is used wherever the highest degree of fineness required, as well as the grinding result is reproducible. Apart from the classical mixing and size reduction processes, the mill also meet all the technical requirements for colloidal grinding.
Initial particle size | 10 mm |
Achievable average grinding fineness | Up to d50 < 1 um |
Average dry grinding fineness | Up to d50 < 20 um |
Wet (colloidal) fineness | Up to d50 < 0,1 um |
Number of grinding jars | 1 pc |
Frequency ratio of planetary and cup rotation | 1:-2 |
Rotational frequency of the planetary disk | 100 – 650 rpm |
Maximum acceleration | 602 m/s2 (61,4 g) |
Reverse drive | Yes |
Grinding jar volume | 250 ml |
Grinding jar material | Stainless steel |

Furnaces
Various furnaces for crystal synthesis and growth, including tube furnace up to 1700°C, tube furnace with a rotary furnace, muffle furnaces up to 1250°C with various gas and vacuum capabilities
Tmax, °C | Environment | |
Tube rotary furnace | 1350 | Vacuum, Argon, Nitrogen, Air, Ar+H2(5%), Oxygen |
Tube high-temperature furnace | 1750 | Vacuum, Argon, Nitrogen (up to 1300°C), Air (up to 1300°C), Ar+H2(5%), Oxygen (up to 1500°C) |
Muffle furnaces | 1250 | Air, Gas flow (Argon, Nitrogen) |

Edmund Buhler MAM-1 argon arc melting unit
For oxygen-sensitive samples to be handled and alloyed in inert gas atmosphere.
1. Melting chamber and movable electrode inside the chamber
2. Designed for melting samples of approx. 5-20 g up to 3500°C,
3. sufficient for most laboratory purposes
4. Arc burning media – argon, argon-hydrogen mixture (5%), helium.

High temperature centrifuge for melt decanting
Maximum speed | 3500 rpm |
Maximum volume of the substance to be separated | 3000 ml |
Maximum acceleration | 2780 m/s2 (283 g) |
Centrifuge chamber temperature indication range | 0 to 150°C |
Maximum ampoule length | 130 mm |

Optical zone melting furnace Crystal Systems FZ-T-4000-H
Crystal Systems FZ-T-4000-H is a four mirror optical floating zone furnace. Temperature distribution around the horizontal plane can be drastically homogenized and can be applied to the growth of high-quality single crystals.
Maximum specimen diameter | 50 mm |
Maximum specimen length | 150 mm |
Lamp type | Halogen |
Number of lamps | 4 |
Vacuum | Up to 5*10-5 Hg mm |
Pressure | Up to 10 bar |
Maximum temperature | 2150 °С |
Lamp power | 300, 500 и 1000 W |
Length of molten zone | Up to 50 mm |
Growth rate | 0,05-27 mm/h |
Speed of slow molten zone movement | 0,05-27 mm/h |
Speed of fast movement of the molten zone | 6-60 mm/min |
Rotation speed of the holder | 5-55 rpm |
Observation | Camera and Monitor |
Growth work environment | Argon, Nitrogen, Oxygen |

PLD/MBE laser sputtering machine model PVD-2300
The PLD/MBE 2300 machine is designed to grow epitaxial films, monolayer film structures, and/or combinatorial thin films and can be easily integrated with a wide range of other sputtering techniques such as magnetron sputtering, effusion cells, ozone generators, and atomic or ion sources. These unique systems allow the user to utilize multiple deposition techniques in a small area to grow unique film structures. The machine produces films of various materials by vacuum atomizing a target of desired composition focused excimer laser radiation (laser ablation method).
Substrate sizes | 5×10 mm, 10×10 mm, and 2-inch |
Substrate sizes | 950°C (in oxygen) for Si, 850°C for transparent substrates (sapphire) in non-contact mode |
Substrate sizes | ± 8°C on a 2-inch diameter substrate |
Operating pressure range | from 5×10-9 Torr to 400 mTorr |
Number and size of targets | Six 2-inch targets |
Number and size of targets | From 50 mm to 100 mm |
Number and size of targets | 60o |
Laser | Eximer (KrF) with 248 nm |
Pulse frequency | 50 Hz |
Pulse frequency | oil-free (turbo pump and volute pump) |
Residual pressure limit in the chamber max. | 5·10-7 Torr |
Residual pressure limit in the chamber max. | optical pyrometer |

PLD/MBE laser sputtering machine model PVD-2300
The PLD/MBE 2300 machine is designed to grow epitaxial films, monolayer film structures, and/or combinatorial thin films and can be easily integrated with a wide range of other sputtering techniques such as magnetron sputtering, effusion cells, ozone generators, and atomic or ion sources. These unique systems allow the user to utilize multiple deposition techniques in a small area to grow unique film structures. The machine produces films of various materials by vacuum atomizing a target of desired composition focused excimer laser radiation (laser ablation method).
The PLD/MBE 2300 machine is designed to grow epitaxial films, monolayer film structures, and/or combinatorial thin films and can be easily integrated with a wide range of other sputtering techniques such as magnetron sputtering, effusion cells, ozone generators, and atomic or ion sources. These unique systems allow the user to utilize multiple deposition techniques in a small area to grow unique film structures. The machine produces films of various materials by vacuum atomizing a target of desired composition focused excimer laser radiation (laser ablation method).

Rigaku MiniFlex 600 powder diffractometer
The MiniFlex benchtop X-ray diffractometer is a multipurpose powder diffraction analytical instrument that can determine: crystalline phase identification (phase ID) and quantification, percent (%) crystallinity, crystallite size and strain, lattice parameter refinement, Rietveld refinement, and molecular structure. It is widely used in research, especially in material science and chemistry, as well as in industry for research and quality control.
X-ray source | Co (λ Kα = 1.79021 Å) |
Tube output voltage | 20 – 40 kV (step 1 kV) |
X-ray source output current | 2 – 15 mA (step 1 mA) |
High voltage generation method | Cockcroft-Walton high-frequency method |
Stability | Within ±0.05% for tube voltage and tube current, taking into account input power fluctuation of ±10% |
Applicable X-ray tube | Toshiba A-21, A-41, PANalytical PW22XX, etc. |
Focus and position control mechanism | ±1 mm, infinitely adjustable through the use of a spring plate |
X-ray diaphragm | Mechanical rotating diaphragm |
Kβ radiation filter | Nickel filter for copper tube, standard thickness 0.015 mm, Iron filter for cobalt tube. |
X-ray exit angle | 6°, fixed |
Goniometer | Vertical θ/2θ |
Goniometer radius | 150 mm |
Scanning axis | θ/2θ linked |
Scanning range 2θ | −3° to +145° |
Measuring range 2θ | +2° to +145° |
Minimum axis pitch angle θ/2θ | 0,005° (2θ) |
Positioning speed | 500° / min (2θ) |
Scanning speed | 0,01 – 100 ° / min |
Reference angle | 2θ = 10° |
Divergence slit | 1,25° |
Beam width | 10 mm |
Soller slits on the incident beam | 2,5° |
Divergence slit | 1,25° |
Soller slits on the diffracted beam | 2,5° |
Receiving slit | 0,3 mm |
Monochromator on the diffracted beam | Graphite |
Detector | Scintillation counter |
Effective window diameter | 23 mm |
Working with sensitive samples | Hermetic sample holder |

Tongda TD-5000 single crystal diffractometer
TD-5000 single crystal X-ray diffractometer is mainly used to measure the three-dimensional spatial structure and electron cloud density of inorganic and organic materials. The structure of special materials such as twins, in-commensurate crystals and quasi-crystals were analyzed and the accurate three-dimensional space (including bond length, bond angle, configuration, conformation and electron density) of new compounds (crystal) was determined. It can provide crystal cell parameters space group, crystal molecular structure, hydrogen bond and weak interaction information, molecular configuration and conformation information.
Microfocus X-ray source | |
Anode material | Mo (λ Kα = 0.71069 Å) |
Power | 50 W |
Focal spot size | 91×139 um2 |
Beam divergence | 6 mrad |
Monochromator for Kα1/Kα2 duplex separation | Yes |
X-ray optics to increase radiation intensity | Yes |
X-ray source generator operating voltage | 10 – 60 kV |
Operating current of the X-ray source generator | 10-864 uA |
Radiation power deviation of the X-ray source for 8 hours after 30 minutes of warm-up time | 0,06 % |
Two-dimensional hybrid pixel detector | |
Detector sensor size | 83.8×67 mm |
Detector pixel size | 172×172 um |
Number of detector matrix pixels | 487×407 |
Total number of detector matrix pixels | 198209 |
Maximum detector readout frequency | 20 Hz |
Detector readout time | 7 ms |
Range of detector readout energies | 3,5-18 keV |
Vertical four-circle kappa goniometer | |
Minimum positioning and scanning step in goniometer axes | 0,0001° |
Scanning mode | Step, continuous, segment, transmission |
Number of sample rotation planes | 3 |
Number of rotation planes of the detector | 1 |
Distance from specimen to detector | 35 – 145 mm |
Goniometer head | With sample position adjustment in X, Y, Z axes |
Chi axis resolution | 0,005° |
Phi angle value | -360° to +360° |
Phi axis resolution | 0,005° |
Omega angle value relative to Theta | -90° to +90° |
Omega axis resolution | 0,00125° |
Theta angle value | -65° to +105° |
Theta axis resolution | 0,00125° |
Kappa angle value | -72° to +72° |
Kappa axis resolution | 0,0025° |
Diameter of the sphere of axis mismatch | 7 um |
Sample temperature control system | |
Temperature control temperature | 100 – 300 К |
Temperature control accuracy | 0,3 К |

JEOL JSM-7001F scanning electron microscope
JEOL JSM-7001F is an autoemission scanning electron microscope, which by using a field-emission electron gun (Schottky cathode), advanced imaging technology and computer technology, not only allows one to observe the fine structure of the sample surface with high resolution (3nm), but also to perform various analyses: local analysis of elemental composition (1µm2) by energy dispersive spectrometry (EDS), cathodoluminescence analysis (CL) and analysis of crystallite orientation by backscattered electron diffraction method (EBSD).
Resolution in secondary electrons | 1.2 nm (at an accelerating voltage of 30 kV); 3.0 nm (at an accelerating voltage of 1 kV). |
Spatial resolution in elemental mapping | 3.0 nm (at an accelerating voltage of 15 kV, working distance of 10 mm, probe current of 5 nA). |
Magnification in SEM mode | x10 to x1 000 000. |
Magnification correction | Automatic correction according to the accelerating voltage and working distance. |
Imaging modes | – image in secondary electrons; – reflected electron image in the atomic number contrast mode; – reflected electron image in the topographic contrast mode. |
Accelerating voltage | – 0.5 to 30 kV (normal mode); – 0.5 to 2.9 kV in 10 V steps; – 2.9 to 30 kV in 100 V steps; – 0.2 to 30 kV (low-voltage mode). |
Probe current | 1×10-12 to 2×10-7 A |
Type of stage | fully eucentric table with angle gauge and backward correction. |
Stage movement ranges | |
Axis X | 70 mm |
Axis Y | 50 mm |
Axis Z | 3 to 41 mm (continuous) |
Tilt T | -5 to +70 |
Rotation R | 360, continuous |
Standard sample holders | for 12.5 mm diameter specimens 10 mm thick; for 32 mm diameter specimens 20 mm in thickness. |
Sample chamber | 10-4 Pa (standard mode); there is a possibility of operation in high-vacuum mode using a cold bus fed with liquid nitrogen and in low-vacuum mode. |
Elemental Analysis | Inca X-Act energy dispersive spectrometer |
Elemental Analysis Detector | Analytical solid state drift detector (SDD) |
Cooling | Peltier element |
Functions | – automatic peak detection – four modes of spectra acquisition; – quantitative analysis; – in-plane element distribution maps (SmartMap) |
Detectable elements | From beryllium (4Be) to plutonium (94Pu) |
Guaranteed resolution | 60 eV at C Kα and 130 eV at Mn Kα |
Peak position stability | less than 1 eV on Mn Kα |
Resolution stability | less than 1 eV on Mn Kα at 1,000-100,000 imp/sec |
Concentration sensitivity | less than 0.1% |
Measurement range of mass fraction of elements, % | 0.1 to 100 |
Detector active area, mm2 | 10 |
Determination of crystallite orientation | Electron backscattered diffraction (EBSD) method by HKLNordlys |

Helios NanoLab 660 FEI
The Helios NanoLab 660 scanning electron-ion microscope is designed to measure the linear dimensions of the topology elements of the microrelief of the surface of solid-state materials and perform local structural modification of the surface of solid-state objects with an ion beam.